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羅斌森

  • 2SJ656

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
    Rds On (Max) @ Id, Vgs : 75.5 mOhm @ 9A, 10V
    Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 4200pF @ 20V
    Power Dissipation (Max) : 2W (Ta), 30W (Tc)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220ML
    Package / Case : TO-220-3 Full Pack

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