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羅斌森

  • NTHD4P02FT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 2.2A (Tj)
    Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 155 mOhm @ 2.2A, 4.5V
    Vgs(th) (Max) @ Id : 1.2V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 6nC @ 4.5V
    Vgs (Max) : ±12V
    Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 10V
    FET Feature : Schottky Diode (Isolated)
    Power Dissipation (Max) : 1.1W (Tj)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : ChipFET?
    Package / Case : 8-SMD, Flat Lead

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