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羅斌森

  • NTHC5513T1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N and P-Channel
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 2.9A, 2.2A
    Rds On (Max) @ Id, Vgs : 80 mOhm @ 2.9A, 4.5V
    Vgs(th) (Max) @ Id : 1.2V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : 180pF @ 10V
    Power - Max : 1.1W
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-SMD, Flat Lead
    Supplier Device Package : ChipFET?

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