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羅斌森

  • NCV1413BDR2G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 7 NPN Darlington
    Current - Collector (Ic) (Max) : 500mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500μA, 350mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 16-SOIC (0.154", 3.90mm Width)
    Supplier Device Package : 16-SOIC

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