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羅斌森

  • 2N5639G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    FET Type : N-Channel
    Voltage - Breakdown (V(BR)GSS) : 35V
    Drain to Source Voltage (Vdss) : 30V
    Current - Drain (Idss) @ Vds (Vgs=0) : 25mA @ 20V
    Input Capacitance (Ciss) (Max) @ Vds : 10pF @ 12V (VGS)
    Resistance - RDS(On) : 60 Ohms
    Power - Max : 310mW
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

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