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  • NCP5111DR2G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Driven Configuration : Half-Bridge
    Channel Type : Synchronous
    Number of Drivers : 2
    Gate Type : IGBT, N-Channel MOSFET
    Voltage - Supply : 10V ~ 20V
    Logic Voltage - VIL, VIH : 0.8V, 2.3V
    Current - Peak Output (Source, Sink) : 250mA, 500mA
    Input Type : Non-Inverting
    High Side Voltage - Max (Bootstrap) : 600V
    Rise / Fall Time (Typ) : 85ns, 35ns
    Operating Temperature : -40°C ~ 125°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-SOIC (0.154", 3.90mm Width)
    Supplier Device Package : 8-SOIC

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