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羅斌森

  • MMBF4391LT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N-Channel
    Voltage - Breakdown (V(BR)GSS) : 30V
    Drain to Source Voltage (Vdss) : 30V
    Current - Drain (Idss) @ Vds (Vgs=0) : 50mA @ 15V
    Voltage - Cutoff (VGS off) @ Id : 4V @ 10nA
    Input Capacitance (Ciss) (Max) @ Vds : 14pF @ 15V
    Resistance - RDS(On) : 30 Ohms
    Power - Max : 225mW
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : SOT-23-3 (TO-236)

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