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羅斌森

  • IRLI610ATU

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 200V
    Current - Continuous Drain (Id) @ 25°C : 3.3A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 5V
    Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 1.65A, 5V
    Vgs(th) (Max) @ Id : 2V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 9nC @ 5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 240pF @ 25V
    Power Dissipation (Max) : 3.1W (Ta), 33W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I2PAK (TO-262)
    Package / Case : TO-262-3 Long Leads, I2Pak, TO-262AA

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