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羅斌森

  • HGT1S10N120BNST

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    IGBT Type : NPT
    Voltage - Collector Emitter Breakdown (Max) : 1200V
    Current - Collector (Ic) (Max) : 35A
    Current - Collector Pulsed (Icm) : 80A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
    Power - Max : 298W
    Switching Energy : 320μJ (on), 800μJ (off)
    Input Type : Standard
    Gate Charge : 100nC
    Td (on/off) @ 25°C : 23ns/165ns
    Test Condition : 960V, 10A, 10 Ohm, 15V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    Supplier Device Package : TO-263AB

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