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羅斌森

  • KSB811GBU

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 1A
    Voltage - Collector Emitter Breakdown (Max) : 25V
    Vce Saturation (Max) @ Ib, Ic : 500mV @ 100mA, 1A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 100mA, 1V
    Power - Max : 350mW
    Frequency - Transition : 110MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 Short Body
    Supplier Device Package : TO-92S

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