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羅斌森

  • 3LN01C-TB-E

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 150mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4V
    Rds On (Max) @ Id, Vgs : 3.7 Ohm @ 80mA, 4V
    Gate Charge (Qg) (Max) @ Vgs : 1.58nC @ 10V
    Vgs (Max) : ±10V
    Input Capacitance (Ciss) (Max) @ Vds : 7pF @ 10V
    Power Dissipation (Max) : 250mW (Ta)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 3-CP
    Package / Case : TO-236-3, SC-59, SOT-23-3

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