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羅斌森

  • ECH8309-TL-H

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 12V
    Current - Continuous Drain (Id) @ 25°C : 9.5A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 16 mOhm @ 4.5A, 4.5V
    Gate Charge (Qg) (Max) @ Vgs : 18nC @ 4.5V
    Vgs (Max) : ±10V
    Input Capacitance (Ciss) (Max) @ Vds : 1780pF @ 6V
    Power Dissipation (Max) : 1.5W (Ta)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-ECH
    Package / Case : 8-SMD, Flat Lead

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