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  • TPS1120DR

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : 2 P-Channel (Dual)
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 15V
    Current - Continuous Drain (Id) @ 25°C : 1.17A
    Rds On (Max) @ Id, Vgs : 180 mOhm @ 1.5A, 10V
    Vgs(th) (Max) @ Id : 1.5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 5.45nC @ 10V
    Power - Max : 840mW
    Operating Temperature : -40°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-SOIC (0.154", 3.90mm Width)
    Supplier Device Package : 8-SOIC

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